In certain analog ICs it is necessary to have very high input impedance and very low base currents. For such applications, the typical current gains of an integrated npn transistor are not high enough. It is possible to increase the current gain of an npn transistor significantly by improving the base transport efficiency. In this case the base is very narrow ( a few hundred angstroms or less). The collector to emitter breakdown of a structure like this is relatively low ( 2V – 3V) because the collector base depletion layer can punch through the active base region into the emitter. This is the punch-through or “super-beta” transistor. Current gains of 5000 are obtainable using this technique at currents of 20uA or so with a Vce of around 0.5V. The fabrication of super-beta transistors in a standard process can be done by using one extra masking step and diffusion. After the base diffusion for the normal NPN transistors a special mask is used to open up the emitter diffusion for the super-beta transistors. At this stage the emitter of the super-beta transistor is only partially diffused.This step is then followed by the masking and n+ diffusion of the standard npn. Owing to the extra diffusion step for the super-beta transistor, the emitter of the super-beta transistor is diffused slightly deeper
than the normal npn resulting in a narrow base width.
FPGA Design and development service
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A wideand RF detector ( 40 Mhz to 3 Ghz) -75 dBm to 5 dBm input
Linear detector performance
A wideband linear RF detector
Price for one unit: $25.00. Lead time for delivery 3 days. 30 Day return policy. Pricing for 100 units or more: $20.00 per unit. Please contact Signal Processing Group Inc. for details for purchase from Signal Processing Group Inc. Email: firstname.lastname@example.org 24/7
Wideband RF detector perforamce , more details
Contact Signal Processing Group Inc.
Please contact Signal Processing Group Inc. on email: email@example.com . We will answer within 24 hours.
2 stage 35 dB gain RF amplifier. Front of the module
Full range frequency response
2 stage amplifier deta
Please see details at http://www.signalpro.biz/2rf_amplifier_details.htm Delivery lead time is 3 days. Return within 30 days for a full refund. Price is $15.00 for one unit and $10.00 per unit in volumes of 100. For higher volumes than 100 please contact Signal Processing group Inc.
miniature LNA module
Mni LNA performance
Delivery lead time is 3 days. Return within 30 days for a full refund. Price is $15.00 for one unit and $12.00 per unit in volumes of 100. For higher volumes than 100 please contact Signal Processing Group Inc. at email: firstname.lastname@example.org or call 602-626-0272 for fastest service.
A high frequency divider from 500 Mhz to % Ghz+
The input interface.
The frequency divider has a differential analog interface. The following parameters apply:
The minimum frequency that can be input is 500 Mhz and the maximum frequency is 6.0 Ghz.
The RF input level is 5 dBm to – 5 dBm. For lower frequencies make sure that the slew rate is
greater than 560 V/us. The input is biased by two 500 Ohm resistors connected to a 1.6V DC bias.
Therefore AC coupling is used at the input. These are two 100pF capacitors.
The output interface.
The output is single ended. The output driver is capable of sourcing and sinking 24 mA. The
equivalent output impedance is 50 Ohm. To avoid reflections it is recommended that the divider
work into a 50 Ohm load.
The inputs are applied to the input SMA I/O. The product will work with both a differential input as
well as a single ended input. However, a differential input works best. The division ratio is applied
to the N1 and N2 control inputs as follows:
N2 N1 Division ratio
0 0 8
0 1 16
1 0 32
1 1 64
The logic levels are:
Logic level Voltage
1 1.4V minimum
0 0.6V maximum
The supply voltage interface.
The operating supply voltage is 3.3V typical. The quiescent (DC) operating supply current is 2 mA.
A high frequency divider 500 Mhz to 5 Ghz+
Contact Signal Processing Group Inc for details and acquisition
Please contact Signal Processing Group Inc. at email: email@example.com or telephone 602-626-0272. Get a response within minutes or worst case 24 hours if contact is by email.
SPDT DC to 3 Ghz RF switch
DC to 3 Ghz RF SPDT switch
RF Switch typical features
Supply voltage = Vcc = 0/+5 Vdc
Operatng temperature = TA = -50° C to 125 Deg C
Operating impedance = 50 Ohm
Input power for 1 dB
compression ( 5.0V system) = 37 dBm ( f = 0.5 to 3 Ghz)
Input third order Intercept = 64 dBm ( 0 to 5.0V system, f = 0.5 to 3 Ghz)
Operating frequency range = DC to 3 Ghz.
Insertion loss DC to 3 Ghz = 0.8 dB
Isolation DC to 3 Ghz = 14 dB minimum
Return loss DC to 3 Ghz = 20 dB
50% contl to 10/90 %
( ON/OFF) = 120 ns
A single stage RF amplifier as a gain block
A single stage RF amplifier summary specifications
Gain, Operating: 19.5 dB
Operating frequency range: 1.0 – 2700 Mhz
OIP3: (Pout = 19.0 dBm), -8.5 dBm
P1dB: 4.6 dBm
N.F: 4.2 dB
Supply voltage Operating: 3.3 – 5.5 Volts
Price: single unit $7.50, 100 units : $5:50.
Free delivery, shipping lead time 2 days.
30 day return policy, buyer ships.
Supply current Supply = 5.0V, 23.0 mA
Embedded design and development
Signal Processing Group Inc. is offering embedded design and development using Microchip processors. Please contact us on firstname.lastname@example.org for more information