tf and fT are two closely related parameters for a bipolar model. Usually the parameter tf is included in the model and fT can be calculated from it and other parameters. tf is used to model the effect of the excess charge stored in the transistor when it is biased in the forward active region. i.e. the base – emitter junction is forward biased and the base collector junction is at 0 Volts. It is needed to calculate the emitter diffusion capacitance. fT is the transistor’s unity gain bandwidth defined as the frequency where the common emitter, zero load, small signal current gain extrapolates to unity ( Ref:”Modeling the bipolar transistor”. Ian Getreu). CAD programs use many different ways to use tf to convert to fT. However, this blog simply provides a way to get the conversion done to estimate the fT from tf. This provides the engineer a quick way to see what he may be dealing with without a lot of calculator overhead. If he needs a very accurate number he can always use an expensive simulator. This simple conversion is given by: fT(max)= 1/(2*pi*tf). This simple conversion assumes a zero value for the transistor’s internal collector pad to collector pin resistance. This resistance is assumed to be very small so this expression is a good estimate. Another assumption is that this is the maximum or peak value of fT. A calculator based on this expression is available from the Signal Processing Group website for download free of charge. Please visit the SPG website for other items of interest in analog and RFMW design.
FPGA Design and development service
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A wideand RF detector ( 40 Mhz to 3 Ghz) -75 dBm to 5 dBm input
Linear detector performance
A wideband linear RF detector
Price for one unit: $25.00. Lead time for delivery 3 days. 30 Day return policy. Pricing for 100 units or more: $20.00 per unit. Please contact Signal Processing Group Inc. for details for purchase from Signal Processing Group Inc. Email: email@example.com 24/7
Wideband RF detector perforamce , more details
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2 stage 35 dB gain RF amplifier. Front of the module
Full range frequency response
2 stage amplifier deta
Please see details at http://www.signalpro.biz/2rf_amplifier_details.htm Delivery lead time is 3 days. Return within 30 days for a full refund. Price is $15.00 for one unit and $10.00 per unit in volumes of 100. For higher volumes than 100 please contact Signal Processing group Inc.
miniature LNA module
Mni LNA performance
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A high frequency divider from 500 Mhz to % Ghz+
The input interface.
The frequency divider has a differential analog interface. The following parameters apply:
The minimum frequency that can be input is 500 Mhz and the maximum frequency is 6.0 Ghz.
The RF input level is 5 dBm to – 5 dBm. For lower frequencies make sure that the slew rate is
greater than 560 V/us. The input is biased by two 500 Ohm resistors connected to a 1.6V DC bias.
Therefore AC coupling is used at the input. These are two 100pF capacitors.
The output interface.
The output is single ended. The output driver is capable of sourcing and sinking 24 mA. The
equivalent output impedance is 50 Ohm. To avoid reflections it is recommended that the divider
work into a 50 Ohm load.
The inputs are applied to the input SMA I/O. The product will work with both a differential input as
well as a single ended input. However, a differential input works best. The division ratio is applied
to the N1 and N2 control inputs as follows:
N2 N1 Division ratio
0 0 8
0 1 16
1 0 32
1 1 64
The logic levels are:
Logic level Voltage
1 1.4V minimum
0 0.6V maximum
The supply voltage interface.
The operating supply voltage is 3.3V typical. The quiescent (DC) operating supply current is 2 mA.
A high frequency divider 500 Mhz to 5 Ghz+
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SPDT DC to 3 Ghz RF switch
DC to 3 Ghz RF SPDT switch
RF Switch typical features
Supply voltage = Vcc = 0/+5 Vdc
Operatng temperature = TA = -50° C to 125 Deg C
Operating impedance = 50 Ohm
Input power for 1 dB
compression ( 5.0V system) = 37 dBm ( f = 0.5 to 3 Ghz)
Input third order Intercept = 64 dBm ( 0 to 5.0V system, f = 0.5 to 3 Ghz)
Operating frequency range = DC to 3 Ghz.
Insertion loss DC to 3 Ghz = 0.8 dB
Isolation DC to 3 Ghz = 14 dB minimum
Return loss DC to 3 Ghz = 20 dB
50% contl to 10/90 %
( ON/OFF) = 120 ns
A single stage RF amplifier as a gain block
A single stage RF amplifier summary specifications
Gain, Operating: 19.5 dB
Operating frequency range: 1.0 – 2700 Mhz
OIP3: (Pout = 19.0 dBm), -8.5 dBm
P1dB: 4.6 dBm
N.F: 4.2 dB
Supply voltage Operating: 3.3 – 5.5 Volts
Price: single unit $7.50, 100 units : $5:50.
Free delivery, shipping lead time 2 days.
30 day return policy, buyer ships.
Supply current Supply = 5.0V, 23.0 mA
Embedded design and development
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