The surface potential in a strongly inverted MOSFET is one of the component parameters in the calculation of current in strong inversion ( or for that matter in weak inversion) of a MOSFET. It is used in the calculation of the threshold voltage. It depends strongly on the surface concentration of the MOSFET and the intrinsic concentration of the substrate ( ni). Signal Processing Group has released a simple calculator for first order calculations of this important quantity. Please visit the Signal Processing Group website and look under the ” calculators” menu item to find this calculator as well as many others.